MPS5179RLRP

Overview

The MPS5179RLRP is an RF small signal NPN bipolar junction transistor manufactured by onsemi. It is designed for very high frequency band applications and utilizes a silicon construction. The device features a maximum collector current of 0.05 A and a collector-emitter voltage rating of 12 V. It has a minimum DC current gain (hFE) of 25 and a maximum power dissipation of 0.3 W. The component is housed in a TO-92 package with three through-hole terminals.

Feature Summary

• Optimized for very high frequency RF signal amplification
• NPN silicon construction for reliable performance
• Low collector capacitance for high-speed operation

Applications

• RF amplifier circuits
• High-frequency signal processing
• VHF communication equipment

Procurement Notes

Verify the manufacturer marking matches onsemi specifications. Confirm the part number suffix indicates the reel packaging format. Ensure the TO-92 lead form matches the design requirements. Check for RoHS compliance status if required by the application standards.

Selection Notes

Select this component when a low-power NPN transistor is needed for VHF bands. Compare the 12 V breakdown voltage against circuit requirements. Verify that the 0.05 A current limit is sufficient for the load. Consider the TO-92 package size for board layout constraints.

Part Context

This part belongs to the MPS5179 series of RF transistors. It is functionally similar to other NPN RF devices in the same family but may differ in specific gain or frequency cutoff parameters. It serves as a discrete solution for analog RF stages.

Replacement Considerations

Check for direct cross-reference parts from manufacturers like Motorola or NXP. Verify pinout compatibility before substitution. Ensure the replacement meets the same VHF frequency and power dissipation ratings.