Single Bipolar Transistors MPS6507 TIN/LEAD product image

MPS6507 TIN/LEAD

$0.18
  • Description:20V 50MA 625MW TH TRANSISTOR-SMA
  • Series:-

SKU:8c94a0647d9d Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

MPS6507 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 20V 50MA 625MW TH TRANSISTOR-SMA. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MPS6507 TIN/LEAD

  • Description:20V 50MA 625MW TH TRANSISTOR-SMA
  • Series:-
  • Mfr:Central Semiconductor Corp
  • Package:Box
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 2mA, 10V
  • Power - Max:625 mW
  • Frequency - Transition:700MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:TO-92-3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for MPS6507 TIN/LEAD

MPS6507 TIN/LEAD

Single Bipolar Transistors Overview

The MPS6507 TIN/LEAD is a single NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It utilizes silicon technology and features a TO-92-3 through-hole package. Key electrical parameters include a collector-emitter voltage (VCEO) of 20 V, a collector-base voltage (VCBO) of 20 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous collector current of 50 mA with a power dissipation rating of 625 mW. It exhibits a transition frequency (fT) of 700 MHz, suitable for RF applications. The operational temperature range spans from -65°C to +150°C.

Single Bipolar Transistors Feature Summary

  • High-frequency performance with a 700 MHz transition frequency for RF oscillator use
  • Robust thermal stability supporting operation up to 150°C
  • Through-hole TO-92-3 packaging for standard board integration

Single Bipolar Transistors Applications

  • RF Oscillator circuits
  • Small signal amplification
  • General purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix required for lead-free or tin/lead compliance when placing orders, as manufacturing specifications may vary by production batch. Confirm the minimum order quantity and factory lead times directly with authorized distributors or the manufacturer prior to procurement. Ensure that the selected variant matches the exact voltage and current ratings required for the target circuit design to prevent component failure.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring high-speed switching or RF signal generation within low-power constraints. The 20 V collector-emitter voltage limit defines its suitability for low-voltage logic and analog interfaces. Consider the 625 mW power dissipation capability when designing heat management strategies. The TO-92-3 package dictates physical layout requirements on the printed circuit board.

Single Bipolar Transistors Part Context

This part belongs to the Central Semiconductor MPS series of small-signal bipolar transistors. These components are widely utilized in consumer electronics and industrial control systems where reliable NPN switching is necessary. The MPS6507 specifically targets applications demanding higher frequency response compared to standard general-purpose transistors like the 2N2222.

Single Bipolar Transistors Replacement Considerations

  • MPS6507 APM TIN/LEAD
  • MPS6507 TRE PBFREE

Single Bipolar Transistors FAQ

What is the maximum operating temperature for the MPS6507?

The maximum operating temperature is +150°C.

Is the MPS6507 suitable for RF applications?

Yes, it has a transition frequency of 700 MHz, making it suitable for RF oscillators.

MPS6507 TIN/LEADMPS6507 TIN/LEAD
$0.18
Buy Now