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MPSA06_D26Z is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 80V 0.5A TO-92-3. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for MPSA06_D26Z
- Description：TRANS NPN 80V 0.5A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA, 1V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for MPSA06_D26Z
Single Bipolar Transistors Overview
The MPSA06_D26Z is an NPN general-purpose amplifier transistor manufactured by onsemi. It operates with a collector-emitter voltage of 80 V and a continuous collector current of 500 mA. The device features a gain-bandwidth product of 100 MHz and a power dissipation rating of 625 mW. It utilizes a TO-92-3 package with kinked leads for through-hole mounting. The component supports an operating temperature range from -55°C to +150°C.
Single Bipolar Transistors Feature Summary
- Designed for general-purpose amplifier applications at collector currents up to 300 mA
- Sourced from process 12
Single Bipolar Transistors Applications
- General-purpose amplifier circuits
Single Bipolar Transistors Procurement Notes
Verify the specific ordering suffix against official documentation, as system integrations may alter nomenclature. Confirm that the requested part matches the exact package type and lead configuration required for your assembly process. Ensure compliance with all applicable safety standards and verify suitability for the intended application environment before procurement.
Single Bipolar Transistors Selection Notes
Select this component for designs requiring an NPN bipolar junction transistor with moderate voltage handling and current capacity. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify that the DC current gain meets the specific requirements of the target circuit topology under expected operating conditions.
Single Bipolar Transistors Part Context
This component belongs to the MPSA06 series of NPN transistors. It is functionally related to other devices in the same family, such as the MMBTA06 and PZTA06, which share similar electrical characteristics but differ in physical packaging. The MPSA06 variant specifically utilizes a through-hole TO-92 package suitable for standard PCB mounting techniques.
Single Bipolar Transistors Replacement Considerations
MPSA06RA
Single Bipolar Transistors FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 80 V.
What is the typical DC current gain at a collector current of 10 mA?
The minimum DC current gain (hFE) is 100 when the collector current is 10 mA and VCE is 1.0 V.
What is the maximum power dissipation rating?
The total device power dissipation (PD) is rated at 625 mW.
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