MPSA18_D75Z

Single Bipolar Transistors Overview

The MPSA18_D75Z is a discontinued NPN general-purpose amplifier transistor manufactured by onsemi. It features a collector-emitter voltage of 45 V, continuous collector current of 100 mA, and total device dissipation of 625 mW. The DC current gain (hFE) ranges from 400 to 1500 at IC = 10 mA and VCE = 5.0 V. The transition frequency is 100 MHz, with a noise figure of 1.5 dB at IC = 100 μA. It operates within a junction temperature range of -55°C to +150°C and is housed in a TO-92-3 package.

Single Bipolar Transistors Feature Summary

• Designed for low-noise, high-gain applications suitable for collector currents between 1 μA and 50 mA.
• Provides high DC current gain ranging from 400 to 1500 under standard test conditions.
• Features a transition frequency of 100 MHz for small-signal amplification.
• Includes a low noise figure of 1.5 dB at specified operating points.

Single Bipolar Transistors Applications

• Low noise signal amplification
• High gain circuit design
• General purpose amplification

Single Bipolar Transistors Procurement Notes

This component has been officially discontinued by the manufacturer. Verify availability through authorized distributors or secondary markets. Confirm that the specific D75Z ordering suffix matches the required Ammo Pack packaging configuration. Ensure compliance with RoHS environmental standards as documented in the original datasheet before finalizing any procurement decisions.

Single Bipolar Transistors Selection Notes

Select this part for designs requiring high DC current gain and low noise characteristics in small-signal applications. Consider the 45 V collector-emitter breakdown voltage and 100 mA maximum current limits when designing circuits. Evaluate the thermal resistance parameters to ensure adequate heat dissipation within the specified junction temperature range during operation.

Single Bipolar Transistors Part Context

The MPSA18 belongs to the NPN general-purpose amplifier family originally developed by Fairchild Semiconductor. This specific variant utilizes Process 07 technology. It shares electrical characteristics with the 2N5088 transistor. The device is packaged in a standard TO-92 form factor, commonly used for through-hole mounting in discrete electronic circuits.

Single Bipolar Transistors Replacement Considerations

Consult the official datasheet for equivalent part numbers such as the 2N5088 which shares identical electrical characteristics. Verify pinout compatibility and package dimensions before substituting components in existing designs.

Single Bipolar Transistors FAQ

What is the minimum DC current gain for the MPSA18?

The minimum DC current gain (hFE) is 400 when tested at a collector current of 10 μA and a collector-emitter voltage of 5.0 V.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (V(BR)CBO) is 45 V when tested with a collector current of 100 μA and an open emitter.

Does the MPSA18 have a specified noise figure?

Yes, the noise figure is specified as 1.5 dB when tested at a collector current of 100 μA, collector-emitter voltage of 5.0 V, source resistance of 10 kΩ, and frequency of 1.0 kHz.