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Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ TO-92
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：650MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
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Overview
The MPSH10-BP is an NPN silicon RF small-signal bipolar transistor manufactured by Micro Commercial Components. It operates with a collector-emitter voltage of 25 V and a collector-base voltage of 30 V. The device supports a continuous collector current of 50 mA and provides a DC current gain ranging from 60 to 200 at 4 mA. Its transition frequency reaches 650 MHz, suitable for RF amplifier applications. Power dissipation is rated at 350 mW with a thermal resistance of 357 °C/W. The component utilizes a TO-92 through-hole package and functions within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Designed for radio frequency amplifier and oscillator circuits
- Utilizes a standard TO-92 through-hole plastic package
- RoHS compliant construction with lead-free finish
Applications
- RF amplification stages
- Oscillator circuits
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix when purchasing. The BP suffix indicates bulk packaging containing 100,000 pieces per carton. Adding the HF suffix designates halogen-free material availability. Confirm that the received components match the MPSH10 marking and TO-92 physical dimensions to ensure authenticity and correct specification compliance.
Selection Notes
Select this component for low-power RF signal processing tasks requiring moderate gain and high-frequency response. Ensure the circuit design accommodates the 350 mW power dissipation limit and the specified thermal resistance. Verify that the required operating voltage remains below the 25 V collector-emitter breakdown threshold during peak signal conditions.
Part Context
This part belongs to the MPSH10 series of NPN RF transistors produced by Micro Commercial Components. The MPSH10-BP variant specifically denotes the standard bulk packaging configuration. The series is characterized by its suitability for general-purpose RF applications in consumer electronics and communication equipment.
Replacement Considerations
Direct substitutes include the Central Semiconductor MPSH10 PBFREE and the MCC MMBTH10-TP. These alternatives share similar NPN RF characteristics and TO-92 packaging, though electrical parameters should be cross-referenced against the original datasheet before implementation.
FAQ
What is the maximum power dissipation rating?
The maximum power dissipation is 350 mW.
Does the MPSH10-BP support halogen-free requirements?
Yes, halogen-free versions are available by adding the -HF suffix to the part number.
What is the transition frequency of the device?
The transition frequency (fT) is 650 MHz.
