MPSH10_D26Z

Overview

The MPSH10_D26Z is an NPN silicon RF transistor manufactured by onsemi, designed for low noise UHF/VHF amplifiers and high output oscillators. It operates with collector currents between 100 µA and 20 mA in common emitter or base configurations. Key electrical parameters include a collector-emitter voltage of 25 V, continuous collector current of 50 mA, and a transition frequency of 650 MHz at 4.0 mA. The device features a minimum DC current gain of 60 and low capacitance values (Ccb: 0.7 pF). It is housed in a TO-92 package with the D26Z suffix indicating tape and reel packaging.

Feature Summary

• Optimized for low noise performance in UHF and VHF amplifier applications
• Capable of high output operation in low frequency drift oscillators
• Designed for use in both common emitter and common base circuit modes

Applications

• Low noise UHF/VHF amplifiers
• High output UHF oscillators
• General purpose switching circuits requiring high frequency response

Procurement Notes

Verify the D26Z ordering suffix confirms the specific tape and reel packaging format required for automated assembly processes. Ensure the component matches the original Fairchild Semiconductor specifications now managed by onsemi to maintain design integrity. Confirm RoHS compliance status if environmental regulations apply to the final product assembly line.

Selection Notes

Select this component when designing circuits requiring an NPN transistor with a transition frequency up to 650 MHz. It is suitable for applications demanding low collector-base capacitance to minimize feedback effects at high frequencies. Consider the thermal resistance characteristics when determining heat dissipation requirements for continuous operation within the specified temperature range.

Part Context

The MPSH10 series originates from Fairchild Semiconductor's Process 42 technology and is now part of the onsemi portfolio. It serves as a general-purpose NPN RF transistor widely used in communication equipment. The device is often compared to similar VHF/UHF transistors like the MMBTH10, sharing identical electrical characteristics but potentially differing in packaging options.

Replacement Considerations

The MMBTH10 is electrically equivalent to the MPSH10. Verify that any substitute maintains the same transition frequency and breakdown voltage ratings to ensure circuit stability in RF applications.

FAQ

What is the maximum operating junction temperature for the MPSH10?

The maximum operating junction temperature is +150 °C.

Does the MPSH10 support surface mount mounting?

No, the MPSH10 is available in through-hole packages such as TO-92. Surface mount versions exist under the MMBTH10 designation in SOT-23 packages.

What is the typical collector-base capacitance at 1.0 MHz?

The collector-base capacitance is typically 0.7 pF when measured at V_CB = 10 V and f = 1.0 MHz.