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The MPSH10_D27Z is an NPN silicon RF transistor manufactured by onsemi, designed for low noise UHF/VHF amplifiers and high output oscillators. It operates with collector currents ranging from 100 µA to 20 mA in common emitter or base configurations. The device features a maximum collector-emitter voltage of 25 V and a continuous collector current rating of 50 mA. Key electrical parameters include a DC current gain (hFE) minimum of 60 at 4.0 mA, a transition frequency (fT) of 650 MHz at 100 MHz, and a collector-base capacitance of 0.7 pF. Thermal dissipation reaches 350 mW in TO-92 packaging.
Verify that the D27Z suffix corresponds to the specified tape and reel packaging configuration before ordering. Confirm the component origin matches the authorized manufacturer specifications to ensure compliance with quality standards. Review the absolute maximum ratings carefully to prevent serviceability impairment during application testing.
Select this component when designing circuits requiring specific low noise characteristics within the UHF and VHF spectrum. Ensure the operating junction temperature remains within the -55 to +150 °C range. Consider the thermal resistance values when calculating power dissipation limits for the chosen package style to maintain reliable long-term operation.
This part belongs to the MPSH10 series of NPN silicon transistors originally developed by Fairchild Semiconductor and now produced by onsemi. The series is engineered for general purpose switching and RF applications. The MPSH10 variant specifically targets ultra-high frequency bands, offering distinct electrical characteristics compared to standard logic transistors.
The MMBTH10 serves as a direct functional equivalent within the same product family. Verify pinout compatibility and package dimensions when substituting between TO-92 and SOT-23 form factors. Consult official datasheets to confirm matching electrical thresholds for critical circuit designs.