ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 25V 650MHZ TO-92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：25V
- Frequency - Transition：650MHz
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：350mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
Download product information
Overview
The MPSH10_D74Z is an NPN RF transistor designed for low noise UHF/VHF amplifiers and high output UHF oscillators. It operates with collector currents ranging from 100 µA to 20 mA in common emitter or common base modes. Key electrical parameters include a collector-emitter voltage of 25 V, a collector-base voltage of 30 V, and a current gain-bandwidth product (fT) of 650 MHz at 100 MHz. The device supports a continuous collector current of 50 mA and functions within a junction temperature range of -55°C to +150°C.
Feature Summary
- Optimized for low noise applications in UHF and VHF amplifier circuits
- Capable of high output performance in low frequency drift UHF oscillators
- Supports operation in both common emitter and common base configurations
Applications
- Low noise UHF amplifiers
- Low noise VHF amplifiers
- High output UHF oscillators
Procurement Notes
Verify the specific ordering suffix D74Z corresponds to the TO-92 Ammo Pack configuration as defined in the packaging data. Confirm that the component meets the required RoHS standards for the intended manufacturing process. Ensure compatibility with the specified thermal resistance values when designing heat dissipation strategies for the final assembly.
Selection Notes
Select this component for designs requiring an NPN silicon transistor with a 650 MHz transition frequency. Consider the 25 V collector-emitter breakdown voltage for appropriate biasing conditions. Evaluate the thermal characteristics, specifically the junction-to-ambient resistance, to ensure stable operation within the specified -55°C to +150°C temperature range during continuous duty cycles.
Part Context
This part belongs to the MPSH10 series of NPN RF transistors manufactured by onsemi. The device is sourced from Process 42 and serves as a discrete semiconductor solution for radio frequency signal processing. It is functionally equivalent to the MMBTH10 variant, differing primarily in package style and mounting configuration.
Replacement Considerations
The MMBTH10 is a documented alternative within the same datasheet, offering identical electrical specifications but utilizing a SOT-23 surface mount package instead of the TO-92 radial leaded format.
