MPSH11

$0.05

Description：RF TRANS NPN 25V 650MHZ TO-92-3
Series：-

SKU:7652c4350743 Category: Bipolar RF Transistors Brand: Fairchild Semiconductor

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 25V 650MHZ TO-92-3
Series：-
Mfr：Fairchild Semiconductor
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：25V
Frequency - Transition：650MHz
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：350mW
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 4mA, 10V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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MPSH11

Overview

The MPSH11 is an NPN silicon RF small signal bipolar transistor manufactured by Fairchild Semiconductor. It features a maximum collector current of 0.05 A and a collector-emitter breakdown voltage of 25 V. The device operates in the very high frequency band, supporting applications up to 300 MHz with collector currents ranging from 100 µA to 10 mA. Key electrical specifications include a DC current gain (hfe) maximum of 60 and power dissipation of 350 mW. It is housed in a TO-92 cylindrical plastic package.

Feature Summary

Designed for low noise amplifier and mixer applications
Optimized for very high frequency band operation
Single-element NPN silicon construction

Applications

Common-emitter low noise amplifiers
RF mixer circuits
Very high frequency signal processing

Procurement Notes

Verify component authenticity through official Fairchild or authorized distributor channels. Confirm datasheet version matches production lot requirements. Check for lead-free compliance status if required by assembly standards. Ensure TO-92 package dimensions align with PCB footprint specifications before finalizing procurement orders.

Selection Notes

Select this component for designs requiring low noise performance in the VHF range. Ensure operating collector current remains within the 100 µA to 10 mA recommended range for optimal linearity. Verify thermal management capabilities support the 350 mW power dissipation limit in the intended enclosure environment.

Part Context

The MPSH11 belongs to the MPSH series of RF transistors designed for general-purpose high-frequency applications. It serves as a discrete solution for signal conditioning in communication systems. The device complements other components in RF front-end modules where low noise figure and stable gain are critical for system performance.