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The MPSH11_D27Z is a high-voltage NPN silicon small-signal bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 400V and a maximum continuous collector current of 150mA. The device utilizes a TO-92-3 Kinked Lead through-hole package with a power dissipation rating of 350mW. Its DC current gain (hFE) ranges from 120 to 500, and it operates within a temperature range of -55°C to +150°C.
Verify the specific D27Z suffix against the official datasheet to confirm lead form and packaging details. Confirm component authenticity via manufacturer channels due to potential obsolescence or alternative sourcing. Ensure thermal management aligns with the 350mW dissipation limit during operation.
Select this component when a high-voltage NPN transistor is required for low-current switching tasks. Compare the 400V rating against circuit requirements to ensure adequate safety margins. Consider the TO-92 package constraints for board space and thermal dissipation needs relative to similar high-voltage alternatives.
This part belongs to the MPSH series of high-voltage transistors designed for general-purpose applications requiring elevated voltage handling capabilities. It serves as a discrete semiconductor solution for analog and digital switching environments where standard low-voltage devices are insufficient.
Consult official substitution guides for equivalent high-voltage NPN transistors with matching VCEO and hFE specifications.