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The MPSH81 TRE is a PNP silicon transistor manufactured by Central Semiconductor Corp, designed for general-purpose RF amplifier applications. It operates with a collector-emitter voltage of 20V and a continuous collector current of 50mA. The device features a transition frequency of 600MHz and a power dissipation rating of 350mW. Packaged in SOT-23 format, the TRE suffix indicates tape and reel delivery suitable for automated surface-mount assembly.
Verify that the specific MPSH81 TRE variant matches the required SOT-23 surface-mount footprint and tape-and-reel packaging specifications. Confirm compatibility with automated placement equipment before procurement. Ensure the manufacturer documentation aligns with the intended RF application parameters.
Select this component when a PNP configuration is required for RF amplification tasks operating within the specified voltage and current limits. Consider the 600MHz transition frequency for bandwidth requirements. Evaluate the SOT-23 package size against available PCB real estate constraints.
This part belongs to Central Semiconductor's discrete transistor lineup, specifically targeting radio frequency applications. It complements other NPN and PNP variants offered by the manufacturer for diverse circuit topologies requiring small-signal amplification at high frequencies.
Consult official substitution guides for equivalent PNP RF transistors with matching 20V ratings and SOT-23 packages. Verify pinout compatibility and thermal characteristics before replacing the original component.