MPSH81_D27Z

Overview

The MPSH81_D27Z is a PNP RF transistor designed for general RF amplifier and mixer applications up to 250 MHz. It operates with collector currents in the 1.0 mA to 30 mA range. The device features a Collector-Emitter Voltage (VCEO) of 20 V, a DC Current Gain (hFE) of 60 at IC = 5.0 mA, and a transition frequency (fT) of 600 MHz. Thermal dissipation is rated at 350 mW in a TO-92 package. The D27Z suffix indicates Tape and Reel packaging containing 2,000 units per reel.

Feature Summary

• Optimized for RF amplifier and mixer circuits operating up to 250 MHz
• High current gain bandwidth product of 600 MHz
• Low collector-base capacitance for improved high-frequency performance

Applications

• RF amplification stages
• Mixer circuits
• General-purpose switching applications

Procurement Notes

Verify the D27Z ordering suffix confirms the specific tape and reel packaging configuration containing 2,000 units per reel. Ensure compatibility with standard TO-92 mounting requirements and confirm that the component meets the required thermal dissipation limits for the intended application environment.

Selection Notes

Select this component when designing circuits requiring a PNP transistor with a 20 V breakdown voltage and operation within the 1.0 mA to 30 mA collector current range. Consider the 600 MHz transition frequency for signal processing needs up to 250 MHz. Evaluate the 350 mW power dissipation capability against the ambient temperature conditions of the final assembly.

Part Context

This part belongs to the MPSH81 / MMBTH81 series of PNP RF transistors. It is sourced from Process 75 manufacturing lines. The MPSH81 designation corresponds to the TO-92 through-hole package variant, while the MMBTH81 refers to the SOT-23 surface-mount version. Both share identical electrical characteristics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.