MPSH81_D75Z

Overview

The MPSH81_D75Z is a PNP RF transistor designed for general RF amplifier and mixer applications up to 250 MHz. It features a collector-emitter breakdown voltage of 20 V, a continuous collector current of 50 mA, and a current gain-bandwidth product (fT) of 600 MHz at 5.0 mA. The device operates within a junction temperature range of -55°C to +150°C. Total power dissipation is rated at 350 mW in a TO-92 package and 225 mW in an SOT-23 package.

Feature Summary

• Optimized for RF amplifier and mixer circuits operating up to 250 MHz
• High current gain-bandwidth product of 600 MHz for efficient signal processing
• Robust thermal performance with a maximum junction temperature of +150°C

Applications

• General RF amplification stages
• RF mixer circuits
• Small-signal processing applications

Procurement Notes

Verify the specific ordering suffix D75Z corresponds to the required TO-92 Ammo Pack configuration before procurement. Confirm that the component meets all necessary RoHS compliance requirements for the intended manufacturing process. Ensure the selected packaging aligns with automated assembly equipment specifications.

Selection Notes

Select this component when designing circuits requiring a PNP transistor with high-frequency response capabilities up to 250 MHz. Consider the 50 mA continuous collector current limit and the 20 V breakdown voltage constraints. Evaluate the thermal resistance characteristics relative to the expected ambient operating conditions and power dissipation requirements.

Part Context

This part belongs to the MPSH81 series of PNP RF transistors manufactured by onsemi. It shares electrical characteristics with the MMBTH81 variant but differs in physical packaging options. The series is engineered for cost-effective RF signal processing tasks where moderate power handling and high bandwidth are required.

Replacement Considerations

The MMBTH81 serves as a functional equivalent within the same datasheet specification. Verify pinout compatibility and package dimensions when substituting between TO-92 and SOT-23 form factors to ensure mechanical fit.