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The MQ2N2608 is a P-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18 metal can package with three pins. The device operates in depletion mode and features a gate-to-source breakdown voltage of 30 V. The drain current at zero gate-source voltage ranges from -5 mA to -1 mA, while the gate-source cutoff voltage spans from 750 mV to 6 V. Power dissipation is rated at 300 mW, with an operating temperature range extending from -65 °C to +200 °C.
Verify the specific manufacturer source, as the MQ2N2608 designation may correspond to variants produced by different entities such as Vishay under similar part numbers. Confirm RoHS compliance status, as standard versions are often non-compliant. Ensure the TO-18 package configuration matches the required through-hole mounting specifications for the target application.
Select this component when a P-channel JFET with high thermal stability is required. The wide operating temperature range up to 200 °C distinguishes it from standard plastic-packaged alternatives. Consider the TO-18 form factor for legacy or ruggedized designs requiring metal can protection against harsh environmental conditions.
The MQ2N2608 belongs to the family of silicon JFETs designed for robust performance. While the base number 2N2608 appears in distributor databases linked to manufacturers like Microchip and Vishay, the MQ prefix typically indicates a specific military or high-reliability variant. These devices are characterized by their ability to maintain functionality in extreme thermal conditions where standard semiconductors would fail.
The 2N2608 is a direct functional equivalent available from various semiconductor manufacturers. Verify pinout compatibility and ensure the replacement device meets the same TO-18 package dimensions and electrical thresholds for gate-source voltage and drain current.