MQ2N4392UB/TR

Overview

The MQ2N4392UB/TR is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is designed for surface-mount applications in the SMD-3 package. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. It supports a continuous drain current of 175 mA with a maximum power dissipation of 1.8 W. The component operates within an ambient temperature range from -65 °C to +200 °C.

Feature Summary

• Utilizes silicon technology for robust semiconductor performance
• Engineered for high-temperature operation up to 200 °C
• Designed for surface-mount installation via SMD-3 packaging

Applications

• High-temperature electronic circuit design
• Surface-mount transistor assemblies
• General-purpose JFET switching and amplification

Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm tape-and-reel configuration and exact electrical tolerances. Ensure the ordering information matches the required surface-mount package type and thermal specifications for the intended application environment.

Selection Notes

Select this component when a single N-channel JFET with a 30 V rating and 175 mA current capacity is required. Consider the wide operating temperature range and surface-mount form factor for compact, high-reliability designs. Confirm that the SMD-3 package dimensions fit the available board space.

Part Context

This part belongs to the Microchip JFET product line, categorized under transistors. It serves as a discrete semiconductor switch or amplifier element. The manufacturer provides technical datasheets detailing absolute maximum ratings and electrical characteristics for integration into larger systems.

Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Cross-reference parameters such as breakdown voltage, current rating, and package style before considering alternative manufacturers.