MQ2N4857UB/TR

$67.24

Description：JFET N-CH 40V TO18
Series：-

SKU:4f23086395d8 Category: JFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：JFET N-CH 40V TO18
Series：-
Mfr：Microchip Technology
Package：Tape & Reel (TR)
FET Type：N-Channel
Voltage - Breakdown (V(BR)GSS)：40 V
Drain to Source Voltage (Vdss)：40 V
Current - Drain (Idss) @ Vds (Vgs=0)：20 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：2 V @ 500 pA
Input Capacitance (Ciss) (Max) @ Vds：18pF @ 10V
Resistance - RDS(On)：40 Ohms
Power - Max：360 mW
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-206AA, TO-18-3 Metal Can
Supplier Device Package：TO-18 (TO-206AA)
Grade：-
Qualification：-

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MQ2N4857UB/TR

Overview

The MQ2N4857UB/TR is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18 through-hole package. The device features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -30 V. It supports a maximum power dissipation of 1.8 W and operates within a temperature range of -65°C to +200°C. The component is designed for high-reliability applications requiring robust performance under extreme thermal conditions.

Feature Summary

High-temperature operation capability up to 200°C
Robust 40V drain-source voltage rating
Through-hole TO-18 packaging for secure mounting

Applications

High-temperature electronic circuits
Military and aerospace systems
Harsh environment instrumentation

Procurement Notes

Verify the specific suffix 'TR' against official Microchip documentation to confirm tape-and-reel packaging requirements. Ensure that the TO-18 through-hole form factor aligns with the target PCB layout. Cross-reference the 1.8W power dissipation limit with thermal management designs. Confirm compliance with RoHS status as indicated in current manufacturer specifications before finalizing procurement orders.

Selection Notes

Select this component when high-temperature stability and ruggedness are critical. The TO-18 package suits applications requiring durable mechanical mounting. Evaluate the 40V breakdown voltage against circuit peak requirements. Consider the wide operating temperature range for environments exceeding standard commercial limits. Verify pinout compatibility with existing design architectures.

Part Context

This JFET belongs to Microchip's discrete transistor portfolio, emphasizing reliability for demanding sectors. The TO-18 metal can package provides superior environmental sealing compared to plastic alternatives. It serves as a specialized solution for analog switching and amplification where standard silicon devices may fail due to thermal stress or radiation exposure in space-grade applications.