MQ2N4857UB

Overview

The MQ2N4857UB is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 through-hole package. The device features a drain-source breakdown voltage of 40 V, a continuous drain current of 20 mA, and a maximum power dissipation of 360 mW. It operates within a temperature range from -65°C to +200°C.

Feature Summary

• Utilizes silicon JFET technology for robust performance
• Designed for high-temperature operation up to 200°C
• Provides single N-channel configuration

Applications

• High-temperature electronic circuits
• Analog signal processing
• RF applications requiring stable biasing

Procurement Notes

Verify the specific datasheet version for the MQ2N4857UB to confirm electrical characteristics and mechanical dimensions. Ensure that the TO-18-3 package compatibility matches your PCB layout requirements. Cross-reference with official Microchip documentation to validate the N-channel JFET specifications against your design constraints before finalizing procurement.

Selection Notes

Select the MQ2N4857UB when high-temperature stability and reliable N-channel JFET performance are required. Its wide operating temperature range makes it suitable for demanding environments. Consider its 40V breakdown voltage and 20mA current rating to ensure it meets the circuit's electrical demands without exceeding limits.

Part Context

This component belongs to the Microchip Technology discrete transistor family, specifically focusing on junction field-effect transistors. It is part of a broader portfolio of silicon-based semiconductor devices designed for various industrial and commercial applications, emphasizing reliability and performance in challenging conditions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.