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The MQ2N4858UB/TR is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a single configuration in an SMD-3 surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of 30 V, and a continuous drain current of 175 mA. The device has a maximum power dissipation of 1.8 W and an on-resistance of 25 Ohms. It operates within a temperature range of -65°C to +200°C.
Verify the specific suffix 'UB/TR' against official Microchip documentation to confirm tape-and-reel packaging and exact electrical binning. Ensure the ordering part number matches the datasheet revision. Confirm RoHS compliance status directly with the manufacturer or authorized distributors prior to procurement.
Select this component when a single N-channel JFET with a 30 V breakdown voltage and 175 mA current rating is required. The SMD-3 package is suitable for automated surface-mount assembly processes. Consider the 1.8 W power dissipation limit and the wide operating temperature range when designing for harsh industrial conditions.
This device belongs to the Microchip JFET product line, specifically designed as a discrete transistor solution. It falls under the broader category of transistors and semiconductors provided by Microchip Technology. The part is distinct from other variants in the series by its specific voltage, current, and packaging characteristics defined in the official datasheet.
Consult the official Microchip datasheet for the 2N4856-2N4861 series to identify pin-compatible alternatives. Verify that any substitute part meets the same 30 V breakdown voltage, 175 mA current, and SMD-3 package requirements without altering circuit functionality.
The maximum operating temperature is +200°C.
No, it is specified for surface-mount installation in an SMD-3 package.
The continuous drain current is rated at 175 mA.