ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：JFET N-CH 30V TO18
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：8 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：800 mV @ 500 pA
- Input Capacitance (Ciss) (Max) @ Vds：18pF @ 10V
- Resistance - RDS(On)：60 Ohms
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18 (TO-206AA)
- Grade：Military
- Qualification：MIL-PRF-19500/385
Download product information
Overview
The MQ2N4861 is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. Designed for surface-mount applications, this single-configured device operates within an extended temperature range of -65°C to +200°C. Key electrical specifications include a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. The component supports a maximum power dissipation of 1.8 W and features a typical on-resistance of 60 Ohms.
Feature Summary
- Capable of reliable operation in extreme thermal environments up to 200°C
- Engineered for high-voltage handling with 30 V breakdown ratings
- Optimized for compact surface-mount integration
Applications
- High-temperature analog signal processing circuits
- Precision current source implementations
- Low-noise amplifier stages requiring wide thermal stability
Procurement Notes
Verify the specific suffix against official Microchip documentation to confirm exact binning or testing criteria. Ensure the ordering part number matches the required package variant. Confirm RoHS compliance status directly with the manufacturer's latest datasheet before finalizing procurement specifications.
Selection Notes
Select this component when circuit designs demand JFET performance at temperatures exceeding standard industrial limits. The 1.8 W power rating supports higher energy dissipation compared to smaller packages. Evaluate the 60 Ohm on-resistance against load requirements to ensure proper biasing conditions are met during operation.
Part Context
This device belongs to Microchip’s specialized line of silicon JFETs designed for rugged environments. It complements through-hole variants like the MX2N4861 by offering a compact surface-mount footprint. The product family targets applications where thermal endurance and stable electrical characteristics are critical design constraints.
Replacement Considerations
Cross-reference the MX2N4861 for equivalent electrical performance if through-hole mounting is acceptable. Verify pinout compatibility and thermal resistance differences when substituting between package types.
