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The MQ2N4861UB/TR is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology using silicon technology. It is designed for surface-mount installation in an SMD-3 package. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. At zero gate-source voltage, the drain-source current is specified at 80 mA, with a maximum on-resistance of 60 Ohms. The component supports a power dissipation of 1.8 W and operates within a temperature range from -65°C to +200°C.
Verify the specific suffix designation against official documentation to confirm tape-and-reel availability versus bulk packaging. Confirm RoHS compliance status and environmental declarations prior to integration. Ensure the ordering quantity aligns with manufacturer minimum order requirements and standard factory pack sizes.
Select this component when high-temperature performance exceeding standard industrial limits is required. The 80 mA saturation current and low on-resistance support moderate power handling in compact surface-mount layouts. Evaluate thermal management strategies to maintain junction temperatures within the specified +200°C maximum limit during continuous operation.
This part belongs to the Microchip JFET family, specifically utilizing silicon technology for robust semiconductor performance. It serves as a discrete active component within broader transistor categories, distinct from integrated circuits or diode arrays. The SMD-3 form factor facilitates automated assembly processes in modern electronic manufacturing.
Consult official substitution guides for equivalent N-channel JFETs with matching 30 V ratings and SMD-3 packages. Verify pinout compatibility and thermal characteristics before replacing the original component.