MQ2N5114

Overview

The MQ2N5114 is a P-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 metal can package designed for through-hole mounting. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. Key electrical characteristics include a gate-source cutoff voltage of 6 V, a zero-gate-voltage drain current of 7 mA, and a drain-source on-resistance of 100 Ohms. The component supports a power dissipation of 500 mW and operates within a temperature range of -65°C to +200°C.

Feature Summary

• Single P-Channel JFET configuration in a hermetically sealed TO-18-3 metal can package.

Applications

• High-reliability analog signal processing circuits

Procurement Notes

Verify the specific ordering suffix against official Microchip documentation to confirm exact screening levels and RoHS compliance status. Ensure the procurement channel provides valid traceability records. Confirm that the TO-18-3 package dimensions match the design requirements. Validate the manufacturer part number directly with Microchip Technology before finalizing orders.

Selection Notes

Select this component when a high-temperature capable P-Channel JFET is required for through-hole applications. The TO-18-3 package offers robust mechanical protection suitable for harsh environments. Consider the 500 mW power dissipation limit and the specific 7 mA drain current characteristic during circuit design. Verify compatibility with existing PCB layouts requiring metal can packages.

Part Context

This device belongs to the 2N511x series of JFETs produced by Microchip Technology. The series includes variants such as the 2N5114, 2N5115, and 2N5116, which share similar structural designs but differ in specific electrical parameters. The MQ prefix typically denotes military-grade screening or specific qualification standards compared to commercial equivalents.

Replacement Considerations

• 2N5114
• MQ2N5115
• MQ2N5116