MQ2N5115

Overview

The MQ2N5115 is a single P-channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 through-hole metal can package. Key electrical specifications include a Drain-Source Breakdown Voltage of 30 V and a Gate-Source Breakdown Voltage of 30 V. The device features a Gate-Source Cutoff Voltage of 6 V and a Drain-Source On-Resistance of 100 Ohms. At zero gate-source voltage, the drain current is specified at 7 mA. Maximum power dissipation is rated at 500 mW. The operational temperature range spans from -65°C to +200°C.

Feature Summary

• High-temperature operation capability up to +200°C for demanding environments
• Robust breakdown voltage ratings of 30V for both drain-source and gate-source terminals
• Single P-channel configuration in a hermetically sealed TO-18-3 metal can package

Applications

• High-reliability analog signal processing circuits
• Low-noise amplifier stages requiring high thermal stability
• Military and aerospace electronic systems

Procurement Notes

Verify the specific ordering suffix and screening level against the official Microchip datasheet before procurement. Confirm that the TO-18-3 leaded package matches the target PCB footprint requirements. Ensure the component meets the necessary environmental compliance standards for the intended application. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and availability status.

Selection Notes

Select this component when a P-channel JFET with high thermal tolerance is required. The TO-18-3 package suits through-hole designs needing hermetic sealing. Consider the 30V breakdown limits and 500mW dissipation rating for circuit compatibility. Verify that the 100 Ohm on-resistance and 7mA IDSS align with the specific biasing needs of the design.

Part Context

This device belongs to the Microchip Technology JFET product line, specifically designed for high-reliability applications. It is part of a series offering various channel configurations and performance characteristics within the same TO-18-3 form factor. The product supports industries requiring robust semiconductor components capable of operating under extreme thermal conditions.

Replacement Considerations

Consult the official Microchip datasheet for verified equivalent part numbers or direct replacements. Ensure any substitute maintains the TO-18-3 package and P-channel JFET topology. Verify that electrical parameters such as breakdown voltage and power dissipation meet or exceed the original specifications.