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The MQ2N5115UB is a P-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a surface-mount UB package and operates within a temperature range of -65°C to +200°C. Key electrical specifications include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 6 V. The device exhibits a drain-source current of 7 mA at zero gate-source voltage, an on-resistance of 100 Ohms, and a power dissipation rating of 500 mW.
Verify the specific suffix 'UB' against official Microchip documentation to confirm the surface mount package type and pinout configuration. Ensure that any required military screening references align with current MIL-PRF-19500 standards if high-reliability performance is mandated for the application. Confirm RoHS compliance status as it varies between commercial and military grades.
Select this component when a P-Channel JFET with high thermal stability and surface mount compatibility is required. The device serves as a direct surface mount equivalent to the TO-18 packaged 2N5115 series. Consider the 500 mW power dissipation limit and the 30 V breakdown voltages when designing biasing networks for small signal amplification or switching tasks.
This part belongs to the Microchip 2N5114 through 2N5116 family of JFETs. The 'UB' designation specifically identifies the low-profile ceramic surface mount package variant. This family provides silicon-based junction field-effect transistors designed for robust performance in demanding electronic systems where space constraints and thermal resilience are critical factors.
The TO-18 leaded package versions of the 2N5115 series serve as functional equivalents but require different board layout considerations due to through-hole mounting. Verify mechanical footprint compatibility before substituting with other surface mount JFETs from different manufacturers.