MQ2N5115UB

MQ2N5115UB

$62.82
  • Description:JFET P-CH 30V UB
  • Series:-

SKU:62aee2cc6d44 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:JFET P-CH 30V UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:P-Channel
  • Voltage - Breakdown (V(BR)GSS):30 V
  • Drain to Source Voltage (Vdss):30 V
  • Current - Drain (Idss) @ Vds (Vgs=0):15 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:3 V @ 1 nA
  • Input Capacitance (Ciss) (Max) @ Vds:25pF @ 15V
  • Resistance - RDS(On):100 Ohms
  • Power - Max:500 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500

Download product information

MQ2N5115UB

Overview

The MQ2N5115UB is a P-Channel Silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It features a surface-mount UB package and operates within a temperature range of -65°C to +200°C. Key electrical specifications include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 6 V. The device exhibits a drain-source current of 7 mA at zero gate-source voltage, an on-resistance of 100 Ohms, and a power dissipation rating of 500 mW.

Feature Summary

  • Low-profile ceramic surface mount package design
  • High-temperature operation capability up to 200°C
  • Surface mount equivalent to JEDEC registered 2N5114 through 2N5116 series

Applications

  • High-reliability applications requiring military screening per MIL-PRF-19500
  • Voltage regulation circuits for higher and lower power requirements
  • Small signal field-effect transistor implementations in harsh environments

Procurement Notes

Verify the specific suffix 'UB' against official Microchip documentation to confirm the surface mount package type and pinout configuration. Ensure that any required military screening references align with current MIL-PRF-19500 standards if high-reliability performance is mandated for the application. Confirm RoHS compliance status as it varies between commercial and military grades.

Selection Notes

Select this component when a P-Channel JFET with high thermal stability and surface mount compatibility is required. The device serves as a direct surface mount equivalent to the TO-18 packaged 2N5115 series. Consider the 500 mW power dissipation limit and the 30 V breakdown voltages when designing biasing networks for small signal amplification or switching tasks.

Part Context

This part belongs to the Microchip 2N5114 through 2N5116 family of JFETs. The 'UB' designation specifically identifies the low-profile ceramic surface mount package variant. This family provides silicon-based junction field-effect transistors designed for robust performance in demanding electronic systems where space constraints and thermal resilience are critical factors.

Replacement Considerations

The TO-18 leaded package versions of the 2N5115 series serve as functional equivalents but require different board layout considerations due to through-hole mounting. Verify mechanical footprint compatibility before substituting with other surface mount JFETs from different manufacturers.

MQ2N5115UBMQ2N5115UB
$62.82
Buy Now