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Product Detailed Parameters
- Description：JFET P-CH 30V UB
- Series：-
- Mfr：Microchip Technology
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
- Input Capacitance (Ciss) (Max) @ Vds：27pF @ 15V
- Resistance - RDS(On)：175 Ohms
- Power - Max：500 mW
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：3-SMD, No Lead
- Supplier Device Package：UB
- Grade：Military
- Qualification：MIL-PRF-19500
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Overview
The MQ2N5116UB/TR is a single-element, P-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. Designed for surface-mount applications, it utilizes the low-profile UB-4 ceramic package. Key electrical specifications include a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. The device features a gate-source cutoff voltage of 4 V and a maximum power dissipation of 500 mW.
Feature Summary
- Surface-mount construction in a low-profile ceramic package suitable for automated assembly
- P-channel silicon JFET technology providing high reliability
- Military screening availability referenced to MIL-PRF-19500 standards
Applications
- High-reliability analog signal processing circuits
- Low-noise amplifier stages requiring stable impedance
- Switching applications compatible with JEDEC registered series equivalents
Procurement Notes
Verify the specific suffix configuration against official Microchip documentation to confirm tape-and-reel packaging requirements. Ensure that the selected variant meets the necessary military or commercial screening standards required by the design specification. Cross-reference the part number with the latest datasheet to validate pinout compatibility and thermal characteristics before finalizing procurement orders.
Selection Notes
Select this component when a surface-mount P-channel JFET with 30 V breakdown ratings is required. It serves as a direct surface-mount equivalent to the through-hole 2N5116 series. Consider the UB-4 package dimensions and thermal dissipation limits of 500 mW during layout planning. Verify if military screening per MIL-PRF-19500 is mandated for the target application environment.
Part Context
This device belongs to the 2N5114 through 2N5116 series of small-signal field-effect transistors. It provides a modern surface-mount alternative to traditional leaded packages while maintaining performance characteristics aligned with established industry standards. The series is utilized in various discrete transistor applications requiring reliable junction FET behavior.
Replacement Considerations
The MQ2N5116UB/TR is the surface-mount equivalent of the 2N5116. For through-hole replacements, consider the MX2N5116 or MQ2N5116. Verify package footprint differences when substituting between SMD and THT variants.
