ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 20V 332A-03
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：20V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：10.7dB ~ 12dB
- Power - Max：700mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 100mA, 5V
- Current - Collector (Ic) (Max)：200mA
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：332A-02
- Supplier Device Package：332A-03, Style 2
- Grade：-
- Qualification：-
Download product information
Overview
The MRF1000MB is a Class A and Class AB microwave power silicon NPN transistor manufactured by MACOM Technology Solutions. It operates within the frequency range of 960 to 1215 MHz with an 18V supply voltage. The device provides 0.7W of output power, delivering 0.2W at 1090 MHz in Class A mode with a minimum gain of 10dB. It features internal input matching for broadband operation and is nitride passivated with gold metallized emitter ballasting.
Feature Summary
- Guaranteed performance at 1090 MHz under Class A conditions
- Internal input matching designed for broadband operation
- Gold metallized emitter ballasting for long life and resistance to metal migration
- Nitride passivation and industry standard package
Applications
- Low-power stages of IFF systems
- DME applications
- TACAN systems
- Radar transmitters
- CW systems
Procurement Notes
Verify the specific ordering suffix and packaging configuration directly with the manufacturer or authorized distributors before placing orders. Confirm that the component meets all necessary environmental screening requirements for your specific deployment. Ensure compatibility with existing thermal management solutions given the power dissipation characteristics.
Selection Notes
Select this component for low-power amplifier applications requiring reliable performance in the 960-1215 MHz band. Consider its suitability for Class A and AB common emitter configurations. Evaluate the internal input matching against your system's impedance requirements to minimize external matching network complexity.
Part Context
This part belongs to the MRF series of bipolar RF transistors from MACOM. These devices are engineered for high-performance applications across various frequency ranges. The MRF1000MB specifically targets microwave power amplification needs in defense and communication sectors.
Replacement Considerations
Check datasheets for alternative parts offering similar frequency ranges and power levels. Verify pinout compatibility and electrical specifications such as gain and VSWR before substituting.
