MRF10502

$439.93

Description：RF TRANS NPN 65V 355J-02
Series：-

SKU:486d60cc4644 Category: Bipolar RF Transistors Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 65V 355J-02
Series：-
Mfr：MACOM Technology Solutions
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：65V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：9dB
Power - Max：500W
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 5A, 5V
Current - Collector (Ic) (Max)：29A
Operating Temperature：200°C (TJ)
Mounting Type：Chassis Mount
Package / Case：355J-02
Supplier Device Package：355J-02, STYLE 1
Grade：-
Qualification：-

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MRF10502

Overview

The MRF10502 is a microwave pulse power silicon NPN transistor manufactured by MACOM Technology Solutions. Designed for common base amplifier applications in the 1025–1150 MHz frequency range, it delivers 500 W peak output power. Performance is guaranteed at 1090 MHz with a minimum gain of 8.5 dB and typical gain of 9.0 dB. The device features internal input and output matching, hermetically sealed packaging, and gold metalization. It undergoes 100% testing for load mismatch across all phase angles with 10:1 VSWR.

Feature Summary

Hermetically sealed industry package with silicon nitride passivation
Gold metalized emitter ballasted for long life and resistance to metal migration
Internal input and output matching for broadband operation
100% tested for load mismatch at all phase angles with 10:1 VSWR

Applications

TCAS transmitters
TACAN transmitters
Mode-S transmitters

Procurement Notes

Verify the specific revision status (e.g., Rev. V1) against current MACOM documentation before procurement. Confirm that the application environment strictly adheres to pulse operation parameters, as continuous wave usage exceeds design limits. Ensure thermal management solutions align with the requirements for the CASE 355J-02 style package to maintain reliability under high peak power conditions.

Selection Notes

Select this component for radar and navigation systems requiring high peak power in the L-band spectrum. The internal matching simplifies circuit design by reducing external components. Verify that the system can support the necessary bias conditions for common base topology. Consider the hermetic seal requirement if the deployment environment demands high environmental protection standards.

Part Context

This part belongs to the family of microwave pulse power silicon NPN transistors from MACOM. Similar devices include the MRF1090MB and MRF1150MA, which operate in adjacent or overlapping frequency bands but offer different peak power levels. These components are typically utilized in military and aerospace communication and navigation transmitter architectures.