MRF136Y

Overview

The MRF136Y is an N-channel enhancement-mode RF power MOSFET designed for wideband large-signal amplifier and oscillator applications up to 400 MHz. It operates at a guaranteed 28V, delivering 30W output power with 14 dB typical broadband gain and 54% efficiency at 150 MHz. The device features excellent thermal stability suitable for Class A operation and is tested for load mismatch at all phase angles with 30:1 VSWR.

Feature Summary

• N-channel enhancement mode construction
• Excellent thermal stability
• Immunity from severe load mismatch

Applications

• Wideband large-signal amplifiers
• Oscillators
• Push-pull circuit configurations

Procurement Notes

Verify the specific datasheet revision (e.g., Rev. V2) against your design requirements. Confirm that the package outline matches your PCB footprint. Ensure the application environment does not involve medical or life-sustaining uses, as these are explicitly excluded by the manufacturer.

Selection Notes

Select this component for VHF power amplifier designs requiring high gain and simple bias systems. The device facilitates manual gain control, ALC, and modulation techniques through DC gate voltage variation. Consider its suitability for Class A operation and impedance matching network design.

Part Context

This part belongs to the MACOM RF MOSFET line, which includes various power transistors for different frequency ranges. The MRF136Y specifically targets the VHF band, offering a planar vertical structure that avoids processing difficulties associated with V-groove devices.

Replacement Considerations

Consult MACOM documentation for direct replacements. Cross-reference with similar parts in the MRF series, such as the MRF136, ensuring compatibility with the required frequency range and power output specifications.

FAQ

How is the power output of the MRF136Y controlled?

Power output can be varied from its rated value down to zero by adjusting the DC gate voltage, facilitating manual gain control and modulation.

What is the recommended quiescent drain current?

The suggested minimum quiescent drain current (IDQ) is 25 mA, though it may need optimization for linear amplification applications.

Is the MRF136Y unilateral?

No, RF power FETs like the MRF136Y are triode devices and therefore not unilateral, which requires stability techniques such as loading or feedback.