MRF1550FNT1

Overview

The MRF1550FNT1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications with frequencies up to 175 MHz. It delivers 50 Watts of output power at 12.5 Volts with a power gain of 14.5 dB and drain efficiency of 55%. The device withstands 20:1 VSWR under overdrive conditions, features a TO-272-6 wrap plastic package, and operates within a junction temperature range up to 200 °C.

Feature Summary

• Broadband performance delivering full power across the 135-175 MHz frequency band
• High thermal stability and ruggedness capable of handling severe load mismatches without damage
• Enhancement-mode operation providing simple bias systems and immunity from thermal runaway

Applications

• VHF and UHF mobile FM equipment power amplifiers
• Commercial broadband RF amplifier designs
• Industrial RF heating and processing systems

Procurement Notes

Verify the specific ordering suffix 'T1' corresponds to the tape and reel packaging configuration containing 500 units per 44 mm reel. Confirm that the component meets RoHS compliance standards and utilizes lead-free terminations as indicated by the 'N' suffix in the part number. Ensure the source documentation matches the Freescale Semiconductor datasheet revision history for accurate electrical specifications.

Selection Notes

Select this component for applications requiring high gain and stable operation in common-source amplifier configurations. The device is optimized for 12.5 Volt supply rails and requires careful heat sinking due to its surface mount package. Designers should account for the lack of internal gate protection and implement external Zener diodes or resistive loading to ensure circuit stability against voltage transients.

Part Context

Originally manufactured by Freescale Semiconductor, this device belongs to the MRF1550 series of RF power lateral MOSFETs. The product line was subsequently integrated into NXP Semiconductors following corporate acquisitions. The MRF1550FNT1 variant specifically denotes the tape and reel packaging format intended for automated surface mount assembly processes.

Replacement Considerations

Direct replacements include the MRF1550NT1, which shares identical electrical characteristics but may differ in packaging format. Verify compatibility regarding the TO-272-6 case outline dimensions and pin assignments before substituting components in existing board layouts.

FAQ

Does the MRF1550FNT1 have internal gate-to-source protection?

No, the device does not contain an internal monolithic Zener diode. External gate protection using a Zener diode or resistor is recommended to prevent oxide layer damage from voltage transients.

What is the maximum operating junction temperature?

The maximum operating junction temperature (TJ) is specified as 200 °C.

How is the gate bias circuit typically implemented?

Since the gate draws negligible DC current, the bias circuit generally consists of a simple resistive divider network. Special linear applications may require more elaborate biasing to optimize critical parameters.