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Product Detailed Parameters
- Description：RF MOSFET LDMOS 12.5V TO272-8
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：470MHz
- Gain：11.5dB
- Voltage - Test：12.5 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：800 mA
- Power - Output：70W
- Voltage - Rated：40 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：TO-272-8
- Supplier Device Package：TO-272-8
- Configuration：-
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Overview
The MRF1570FNT1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 470 MHz. It operates at a drain-source voltage of 12.5 Vdc, delivering 70 W output power with 11.5 dB gain and 60% efficiency at 470 MHz. The device withstands 20:1 VSWR under overdrive conditions. Maximum ratings include a drain-source voltage of +40 Vdc, total device dissipation of 165 W at 25°C case temperature, and an operating junction temperature up to 200°C.
Feature Summary
- Broadband performance across 135-175 MHz and 400-470 MHz bands
- High ruggedness capable of handling severe load mismatches
- Excellent thermal stability with low thermal resistance
- ESD protection compliant with Human Body Model Class 1
Applications
- Large-signal common source amplifier applications in mobile FM equipment
- Broadband commercial RF power amplification
- Industrial RF signal generation systems
Procurement Notes
Verify the component matches the specific Freescale Semiconductor datasheet revision 10 (June 2009). Confirm the package style corresponds to Case 1366A-03 (TO-272-8 Wrap Plastic) and that the suffix FNT1 indicates lead-free terminations and tape-and-reel packaging. Ensure compatibility with the specified 12.5 Vdc supply requirements.
Selection Notes
Select this device for designs requiring high gain and wide bandwidth without complex tuning networks. The lateral MOSFET structure offers immunity from thermal runaway and simplified biasing compared to bipolar alternatives. Verify that the application can accommodate the required quiescent current of 800 mA and that the PCB layout supports the necessary heat sinking for the plastic package.
Part Context
This component belongs to the MRF1570 series of RF power transistors manufactured by Freescale Semiconductor. It serves as a surface-mount solution for VHF and UHF mobile power amplifier applications, replacing older through-hole variants while maintaining form, fit, and function compatibility.
Replacement Considerations
The MRF1570T1 and MRF1570FT1 are confirmed replacements with no form, fit, or function changes.
FAQ
Does the MRF1570FNT1 have internal gate-to-source Zener protection?
No, the device does not contain an internal monolithic Zener diode. External protection is recommended if gate voltage transients are expected.
What is the maximum operating junction temperature?
The maximum operating junction temperature is 200°C.
How should the gate be terminated during testing?
The gate must never be left open-circuited or floating. It should be terminated with a low impedance path to prevent turn-on due to leakage currents or voltage buildup.
