MRF16006

MRF16006

$37.92
  • Description:RF TRANS NPN 55V 395C-01
  • Series:-

SKU:509f3698ba59 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF TRANS NPN 55V 395C-01
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):55V
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):-
  • Gain:7.4dB
  • Power - Max:6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 200mA, 5V
  • Current - Collector (Ic) (Max):1A
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:395C-01
  • Supplier Device Package:395C-01, Style 2
  • Grade:-
  • Qualification:-

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MRF16006

Overview

The MRF16006 is an NPN silicon power transistor designed for microwave large-signal applications. It operates at 28 V with a frequency range of 1600–1640 MHz and delivers 6.0 W of output power. The device utilizes a Class C, common-base configuration optimized for continuous wave (CW) amplifier circuits. Packaged in the 395C-01 Style 2 case, it features gold metalization and silicon nitride passivation to ensure reliability in high-frequency RF environments.

Feature Summary

  • Optimized for 28 V microwave large-signal operation
  • Class C common-base architecture for CW amplification
  • Gold metalized construction with silicon nitride passivation

Applications

  • Microwave large-signal amplifier circuits
  • Continuous wave (CW) RF power amplification
  • Frequency bands around 1600–1640 MHz

Procurement Notes

Verify the specific package variant against the manufacturer's current mechanical drawings, as style designations may evolve. Confirm that the application circuit supports the required 28 V bias and Class C operating conditions. Ensure thermal management aligns with the 395C-01 Style 2 case specifications for reliable heat dissipation during high-power operation.

Selection Notes

Select this component when designing for the 1600–1640 MHz band requiring 6.0 W output at 28 V. The common-base topology suits impedance matching networks compatible with this configuration. Evaluate thermal resistance requirements based on the specified package style to maintain junction temperatures within safe operating limits under continuous wave conditions.

Part Context

This part belongs to MACOM's portfolio of silicon bipolar transistors engineered for robust microwave performance. The MRF16006 specifically targets applications demanding stable power delivery in the L-band spectrum. Its construction emphasizes durability through specialized surface treatments suitable for demanding RF environments.

Replacement Considerations

Consult official substitution lists for equivalent NPN silicon power transistors offering similar 6.0 W output at 28 V within the 1600–1640 MHz range. Verify pinout compatibility and thermal characteristics before integrating alternative components into existing designs.

MRF16006MRF16006
$37.92
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