MRF19030LR5

Overview

The MRF19030LR5 is an N-channel enhancement-mode lateral MOSFET designed for PCN and PCS base station applications operating between 1800 MHz and 2000 MHz. It delivers a typical output power of 30 W PEP at 26 Vdc with a drain efficiency of 36% and power gain of 13 dB at 1960 MHz. The device features internal input and output matching, integrated ESD protection, and RoHS compliance.

Feature Summary

• Internally matched for ease of use
• High gain, high efficiency and high linearity
• Integrated ESD protection
• Designed for maximum gain and insertion phase flatness

Applications

• PCN and PCS base station applications
• FM, TDMA, CDMA and multicarrier amplifier applications
• Class AB cellular radio amplifiers

Procurement Notes

Verify the exact suffix against official documentation to confirm package style and reel specifications. Confirm RoHS compliance status and check for any specific handling requirements related to the NI-400 or NI-400S packages before procurement.

Selection Notes

Select this component for broadband RF power amplifier designs requiring high linearity and efficiency in the 1.8 GHz to 2.0 GHz range. Ensure thermal management meets the specified junction-to-case resistance and operating temperature limits for reliable performance.

Part Context

This part belongs to the MRF19030 series of lateral N-channel RF power MOSFETs. It is characterized by its robust construction and suitability for demanding wireless communication infrastructure environments where stable operation under varying load conditions is critical.

Replacement Considerations

MRF19030LR3, MRF19030LSR3

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is +65 Vdc.

Is the device internally matched?

Yes, the MRF19030LR5 is internally matched on both input and output ports.

What is the typical power gain at 1960 MHz?

The typical power gain is 13 dB when operating at 1960 MHz with a 30 W PEP output.