MRF275L

Overview

The MRF275L is an N-channel enhancement mode RF MOSFET transistor designed for broadband commercial and military applications using single-ended circuits at frequencies up to 500 MHz. It operates at a drain voltage of 28 Vdc, delivering an output power of 100 W with a typical power gain of 8.8 dB and efficiency of 55%. The device features low thermal resistance and a reverse transfer capacitance (Crss) of 17 pF typ. at VDS = 28 V. It is housed in the CASE 333-04, STYLE 2 package.

Feature Summary

• N-channel enhancement mode construction suitable for HF, VHF, and UHF power amplifier applications
• High ruggedness verified through testing at rated output power
• Low reverse transfer capacitance to support broadband performance
• Gate voltage control capability for manual gain control, AGC/ALC, and modulation systems

Applications

• Solid state transmitters for FM broadcast
• TV channel frequency band transmitters
• Broadband commercial RF power amplifiers
• Military RF power amplifiers

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the CASE 333-04, STYLE 2 package dimensions match the intended PCB layout. Ensure handling procedures strictly follow antistatic protocols, as the gate oxide layer is susceptible to damage from electrostatic discharge or floating gate conditions during installation.

Selection Notes

Select this component for designs requiring high power output and gain within the 500 MHz bandwidth. The enhancement mode operation simplifies biasing compared to depletion devices. Consider the 28 V operating voltage requirement and the need for external gate protection if voltage transients are present. Verify that the thermal management solution can handle the power dissipation associated with 100 W output and the specified efficiency.

Part Context

The MRF275L belongs to MACOM's RF MOSFET line, which utilizes vertical structures with planar designs. These transistors are characterized by high gain, low noise, and relative immunity to thermal runaway. They are engineered to withstand severely mismatched loads without suffering damage, making them robust choices for demanding RF environments.

Replacement Considerations

Consult the official MACOM product portfolio for direct replacements. Cross-referencing requires matching the 100 W output power, 500 MHz frequency range, 28 V operating voltage, and CASE 333-04 package style to ensure functional compatibility.

FAQ

Does the MRF275L include internal gate protection?

No, the device does not have an internal monolithic zener diode from gate-to-source. External zener diodes are recommended if gate protection is required.

How is the power output controlled?

Power output can be varied from its rated value down to zero by varying the DC gate voltage, facilitating manual gain control and modulation systems.

What is the recommended minimum quiescent drain current?

The device was characterized at IDQ = 100 mA per side, which is suggested as the minimum value for optimal performance.