MRF281SR1

$26.29

Description：RF MOSFET LDMOS 26V NI200
Series：-

SKU:3da3d0564b19 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 26V NI200
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：1.93GHz
Gain：12.5dB
Voltage - Test：26 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：25 mA
Power - Output：4W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-200S
Supplier Device Package：NI-200S
Configuration：-

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MRF281SR1

Overview

The MRF281SR1 is a lateral N-channel broadband RF power MOSFET designed for cellular base station applications. It operates at frequencies from 1000 to 2500 MHz and is characterized for Class A and AB operation at 26 volts. The device delivers 4 Watts PEP output power with 11 dB power gain and 30% drain efficiency at 1930 MHz. It features excellent thermal stability, handles 10:1 VSWR, and includes S-parameter characterization at high bias levels.

Feature Summary

Designed for digital and analog cellular PCN and PCS base station applications
Excellent thermal stability with specified two-tone performance
Characterized with series equivalent large-signal impedance parameters
Capable of handling 10:1 VSWR under standard operating conditions

Applications

Digital cellular PCN base stations
Analog PCS base stations
Commercial and industrial RF amplifier stages

Procurement Notes

Verify the specific suffix R1 indicates tape and reel packaging containing 500 units per 12 mm, 7 inch reel. Confirm that this component is archived and no longer manufactured by checking current distributor availability against the original Freescale Semiconductor documentation.

Selection Notes

Select this component for designs requiring a 4 Watt PEP output at 26 Volts within the 1000 to 2500 MHz range. Ensure the application supports Class A or AB operation and utilizes appropriate heat sinking given the junction-to-case thermal resistance specifications provided in the datasheet.

Part Context

This part belongs to the MRF281 series of lateral N-channel enhancement-mode LDMOS transistors. Originally produced by Freescale Semiconductor, it serves as a broadband RF power solution for wireless infrastructure before being archived.