MRF314

Overview

The MRF314 is an NPN silicon RF power transistor designed for wideband driver and output amplifier stages operating between 30 MHz and 200 MHz. It delivers a guaranteed output power of 30 W at 150 MHz with a minimum gain of 10 dB under 28 Vdc bias. Key electrical limits include a collector-emitter breakdown voltage (V(BR)CEO) of 35 V, a collector-base breakdown voltage (V(BR)CBO) of 65 V, and an emitter-base breakdown voltage (V(BR)EBO) of 4 V. The device supports a continuous collector current of 3.4 A and handles up to 82 W of total device dissipation at 25°C case temperature. It features a thermal resistance from junction to case of 2.13 °C/W.

Feature Summary

• Guaranteed performance at 150 MHz with 30 W output power and 10 dB minimum gain
• 100% tested for load mismatch resilience across all phase angles with 30:1 VSWR
• Gold metallization system engineered for high reliability applications

Applications

• Aerospace & Defense systems
• ISM band equipment

Procurement Notes

Verify the specific revision status against the latest MACOM datasheet before integration. Confirm that the application environment remains within the specified thermal and voltage limits to ensure long-term reliability. Check for any recent product change notices regarding packaging or material composition updates.

Selection Notes

Select this component for wideband RF applications requiring robust power handling in the 30-200 MHz range. Ensure the design accommodates the 28 Vdc supply requirement and provides adequate heat sinking to manage the 82 W dissipation rating. Validate circuit stability under high VSWR conditions given the device's tested mismatch tolerance.

Part Context

This part belongs to MACOM's RF Line of NPN silicon power transistors. It is housed in the CASE 211-07 package, Style 1, which utilizes screw mount installation. The device is specifically optimized for large signal amplifier stages where consistent gain and power output are critical across broad frequency bands.

Replacement Considerations

No direct public substitute part numbers are documented for the MRF314. Designers should evaluate other MACOM RF bipolar transistors with similar power and frequency specifications if replacement is required.