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The MRF327 is a controlled Q broadband power transistor designed for wideband large-signal output amplifier stages operating in the 100 to 500 MHz frequency range. It delivers an output power of 80 W over the 225 to 400 MHz band and operates at 28 Vdc. The device guarantees a minimum gain of 7.3 dB at 400 MHz. It features a built-in matching network utilizing a double match technique for broadband operation and is characterized across the full 100 to 500 MHz spectrum.
Verify the specific revision status, such as Rev. V1, against current MACOM documentation before procurement. Confirm that the application environment supports the required 28 Vdc operating voltage and thermal management capabilities. Ensure the design accommodates the specified 30:1 VSWR tolerance to maintain device integrity during operation.
Select this component when designing wideband large-signal output amplifiers requiring guaranteed performance between 225 and 400 MHz. The integrated matching network simplifies circuit design by eliminating external components. Verify that the target frequency range falls within the 100 to 500 MHz operational bandwidth and that the 28 Vdc supply aligns with system requirements.
The MRF327 belongs to the MACOM RF Line of controlled Q broadband power transistors. This series focuses on providing stable, predictable performance across wide frequency bands without requiring complex external tuning networks. The device utilizes gold metallization to ensure durability and reliability in demanding RF environments.
Consult official MACOM documentation for verified substitute part numbers. Do not assume cross-compatibility with other RF transistors based solely on frequency or power ratings.