MRF393

Overview

The MRF393 is a dual N-channel RF power transistor designed for wideband large-signal output and driver amplifier stages operating between 30 MHz and 500 MHz. It features two transistors in a single package with separate base and collector leads and common emitters, enabling push-pull configurations. The device operates at 28 V and delivers 100 W of output power. Typical gain is 9.5 dB in Class AB and 8.5 dB in Class C, with an efficiency of 55%. Built-in input impedance matching networks support broadband operation.

Feature Summary

• Dual-transistor configuration within a single package to facilitate space-saving push-pull designs
• Integrated input impedance matching networks for simplified broadband circuit implementation
• Push-pull arrangement capability to reduce even-numbered harmonic distortion
• Gold metallization system engineered for high reliability and robust performance

Applications

• Wideband large-signal output amplifier stages
• Broadband driver amplifier stages
• High-power RF applications in the 30 to 500 MHz frequency range

Procurement Notes

Verify the specific datasheet revision (e.g., Rev. V1) against the manufacturer's official documentation before finalizing procurement. Confirm that the package style matches CASE 744A-01 requirements. Ensure all electrical parameters align with the intended operational class and frequency range specified in the current product specifications.

Selection Notes

Select this component when designing circuits requiring 100 W output power across a broad spectrum from 30 MHz to 500 MHz. The integrated matching networks simplify design efforts compared to discrete alternatives. Consider the dual-transistor layout if a push-pull topology is required to manage harmonics and maximize efficiency in the target application band.

Part Context

The MRF393 belongs to MACOM's RF Line controlled Q series of broadband power transistors. This series focuses on providing high-reliability solutions for commercial and industrial RF applications. The dual-transistor architecture distinguishes it from single-device counterparts by offering inherent symmetry advantages for balanced amplifier topologies.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.