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The MRF428 is an NPN silicon RF power transistor designed for high-voltage linear amplifier applications from 2 to 30 MHz. It delivers 150 W PEP output power at 30 MHz with a minimum gain of 13 dB and efficiency of 45%. The device features intermodulation distortion of -30 dB max at full power. It undergoes 100% testing for load mismatch at all phase angles with 30:1 VSWR at 150 W CW. Packaged in CASE 211-11, STYLE 1, it supports marine and base station equipment.
Verify the specific revision level (Rev. V2) against current MACOM documentation before procurement. Confirm that the CASE 211-11 package style matches your board layout requirements. Ensure the application environment remains within the specified 2 to 30 MHz frequency range for optimal performance. Check for any recent updates to the datasheet regarding electrical characteristics or reliability data.
Select this component when high-voltage linear amplification is required in the HF band up to 30 MHz. The 150 W PEP rating suits demanding RF power stages. Consider the 30:1 VSWR robustness for environments with unpredictable load conditions. Evaluate thermal management needs based on the 45% efficiency specification at full power output.
The MRF428 belongs to MACOM's RF Line of NPN silicon power transistors. It complements other devices like the MRF429 and MRF317, which share similar packaging or operational principles but differ in power ratings and frequency ranges. This transistor targets specific high-power, lower-frequency applications compared to microwave GaN solutions.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with MRF429 or MRF317 only if their specific electrical parameters align with the design requirements, noting differences in power handling and frequency coverage.