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The MRF448 is an NPN silicon RF power transistor from MACOM's RF Line, designed for high-voltage applications as a high-power linear amplifier operating between 2.0 and 30 MHz. It delivers 250 W output power with a minimum gain of 12 dB and 45% efficiency at 50 V and 30 MHz. The device exhibits intermodulation distortion of -30 dB (max) at 250 W PEP. It is 100% tested for load mismatch at all phase angles with a 3:1 VSWR.
Verify the specific manufacturer source when sourcing this component, as multiple vendors including Motorola, Tyco Electronics, and Advanced Semiconductor have historically produced the MRF448. Confirm that the datasheet revision matches your design requirements, as specifications may vary slightly between original and current manufacturers. Ensure the package style aligns with your thermal management strategy.
Select the MRF448 for applications requiring high voltage operation and significant linear power output in the HF band. Consider its 250 W capability and 45% efficiency for systems where thermal dissipation can be managed effectively. Evaluate the -30 dB IMD specification against your linearity requirements. Verify compatibility with the CASE 211-11, Style 1 package for proper mounting and heat sinking.
The MRF448 belongs to MACOM's RF Line of NPN silicon power transistors. It is engineered for robust performance in demanding RF environments, specifically targeting high-power linear amplification tasks. Its design focuses on reliability under high voltage conditions, making it suitable for critical communication infrastructure.
Historical equivalents include parts from Motorola, Tyco Electronics, and Advanced Semiconductor. Verify pinout and thermal characteristics before substitution. Check for updated datasheets from alternative manufacturers to ensure parameter compatibility.