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The MRF455 is an NPN silicon power transistor designed for RF power amplifier applications up to 30 MHz. It delivers a guaranteed output power of 60 W at 12.5 V with a minimum gain of 13 dB and efficiency of 55%. The device features a collector-emitter breakdown voltage of 18 Vdc, continuous collector current of 15 Adc, and total device dissipation of 175 W at 25°C case temperature. It utilizes gold metallization for high reliability and is housed in a ceramic flange package.
Verify the specific revision status against the latest MACOM datasheet before procurement. Confirm that the application environment remains within the specified thermal limits, as sustained operation near maximum survivability limits is not recommended by the manufacturer. Ensure proper grounding and thermal management are implemented during installation.
Select this component for linear or saturated power amplifier designs operating strictly below 30 MHz. Evaluate the required heat sinking capabilities carefully, given the 175 W dissipation rating at 25°C case temperature. Consider the input and output impedance values provided in the functional test section for accurate matching network design.
This part belongs to MACOM's RF Line series of bipolar RF transistors. These devices are engineered for high-performance power amplification in the HF band. The MRF455 serves as a robust solution for legacy and specialized communication systems requiring high power density and reliability in compact form factors.
Consult MACOM documentation for direct replacements. Verify pinout compatibility and thermal resistance specifications when substituting with other RF power transistors from different manufacturers.