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The MRF553 is an NPN silicon RF transistor designed for wideband large signal stages in the VHF frequency range. It operates with a collector-emitter breakdown voltage of 16 Vdc and supports a maximum collector current of 500 mA. At 175 MHz and 12.5 Vdc, it delivers 1.5 W output power with a minimum gain of 11.5 dB and typical efficiency of 60%. The device utilizes a PowerMacro package with electroless tin-plated leads.
Verify component authenticity through authorized Microsemi or Advanced Power Technology channels. Confirm RoHS compliance status via the 'G' suffix designation if lead-free terminals are required. Review the latest datasheet revision for any updates to absolute maximum ratings or electrical specifications before finalizing procurement orders.
Select this component for VHF applications requiring stable performance under load mismatch conditions. Ensure thermal management accommodates up to 3.0 Watts dissipation at 75°C case temperature. Verify that the operating frequency aligns with the specified 175 MHz test conditions for optimal gain and efficiency metrics.
The MRF553 belongs to the RF & Microwave Discrete Low Power Transistors family from Advanced Power Technology. It is categorized alongside similar NPN devices like the MRF555 and MRF557 within the PowerMacro package lineup, targeting general-purpose RF and low-power amplifier designs in the VHF spectrum.
The MRF553T is a variant within the same series. Cross-reference with other PowerMacro NPN transistors such as the MRF555 or MRF557 for alternative sourcing options while maintaining similar package and performance characteristics.