MRF553G

Overview

The MRF553G is an NPN silicon RF discrete low power transistor designed for wideband large signal stages in the VHF frequency range. It operates with a collector-emitter voltage of 16 Vdc and delivers 1.5 W output power at 175 MHz. The device provides a minimum gain of 11.5 dB and typical efficiency of 60% at 12.5 V. It utilizes a Power Macro package with electroless tin plated leads, ensuring improved solderability and RoHS compliance.

Feature Summary

• Designed for wideband large signal applications within the VHF spectrum
• Utilizes a cost-effective Power Macro package construction
• Features electroless tin plated leads to enhance soldering performance

Applications

• VHF frequency wideband amplifier stages
• General purpose RF power amplification
• Low power RF microwave discrete circuits

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm RoHS compliance status via the 'G' suffix designation. Ensure thermal management meets the specified dissipation requirements at case temperatures. Review absolute maximum ratings before circuit integration to prevent device failure.

Selection Notes

Select this component for VHF band applications requiring moderate power output and high linearity. Consider the Power Macro package dimensions for PCB layout constraints. Evaluate thermal derating curves if operating above 25°C case temperature. Compare static and dynamic parameters against system requirements for optimal performance matching.

Part Context

The MRF553 series belongs to Advanced Power Technology's lineup of RF and microwave discrete transistors. This specific model targets the VHF range, offering a balance between power handling and gain. The G suffix indicates lead-free manufacturing compliant with environmental standards, distinguishing it from older non-compliant variants.

Replacement Considerations

MRF553T serves as a compatible alternative within the same product family.