MRF553T

MRF553T

$1.35
  • Description:RF TRNS NPN 16V 175MHZ PWR MACRO
  • Series:-

SKU:d612e2dab9ff Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRNS NPN 16V 175MHZ PWR MACRO
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):16V
  • Frequency - Transition:175MHz
  • Noise Figure (dB Typ @ f):-
  • Gain:11.5dB
  • Power - Max:3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 250mA, 5V
  • Current - Collector (Ic) (Max):500mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:Power Macro
  • Supplier Device Package:Power Macro
  • Grade:-
  • Qualification:-

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MRF553T

Overview

The MRF553T is an NPN silicon RF discrete low power transistor designed for wideband large signal stages in the VHF frequency range. It operates with a collector-emitter voltage of 16 Vdc and delivers 1.5 W output power at 175 MHz. The device provides a minimum gain of 11.5 dB and typical efficiency of 60% when specified at 12.5 V. It utilizes a Power Macro package with electroless tin-plated leads to enhance solderability. Total device dissipation reaches 3.0 Watts at a case temperature of 75°C, with a derating factor of 40 mW/°C above that threshold.

Feature Summary

  • Engineered for wideband large signal applications within the VHF spectrum
  • Utilizes a cost-effective Power Macro package construction
  • Features electroless tin-plated leads for improved solderability

Applications

  • VHF frequency wideband large signal amplifier stages
  • General purpose RF power amplification
  • Low power RF and microwave discrete circuits

Procurement Notes

Verify the specific manufacturer source, as the MRF553 designation appears across multiple vendors including Advanced Power Technology and Microsemi Corporation. Confirm the exact datasheet revision and RoHS compliance status corresponding to the 'G' suffix if applicable. Ensure the Power Macro package dimensions match the target PCB footprint requirements before finalizing procurement orders.

Selection Notes

Select this component for VHF band designs requiring moderate power output around 1.5 W. The device offers high linearity and stability under load mismatch conditions. Consider the thermal management capabilities provided by the Power Macro package for heat dissipation. Verify that the operating frequency aligns with the 140-175 MHz broadband circuit specifications outlined in the functional test data.

Part Context

The MRF553 series belongs to a family of NPN silicon RF transistors optimized for low power applications. Variants such as the MRF559 and MRF557 share similar packaging or performance characteristics but differ in frequency ranges and power handling capabilities. The MRF553T specifically denotes the tape and reel packaging format for automated assembly processes.

Replacement Considerations

The MRF559 serves as a related alternative within the same product family offering different power levels. The MRF557 provides comparable performance metrics with slight variations in current handling. Evaluate these options based on specific gain and efficiency requirements while maintaining compatibility with the existing Power Macro package constraints.

MRF553TMRF553T
$1.35
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