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The MRF555 is an NPN silicon RF transistor designed for wideband large signal stages in the UHF frequency range. It operates with a specified collector-emitter voltage of 12.5 V and is characterized at 470 MHz. The device delivers a typical output power (POUT) of 1.5 W with a minimum gain (GP) of 11 dB under these conditions. Packaged in a surface-mount configuration, it serves as a low-power RF component suitable for predriver applications within its designated frequency band.
Verify the specific manufacturer source, as the MRF555 designation appears across multiple vendors including Microsemi, Motorola, and Advanced Semiconductor. Confirm package type and pinout compatibility before integration. Ensure the selected variant matches the required electrical specifications for your UHF application design.
Select this component when designing UHF stage drivers requiring wideband performance. The 1.5 W output capability and 11 dB gain make it suitable for predriver roles. Consider the 12.5 V operating requirement and surface-mount packaging constraints during PCB layout and thermal management planning.
The MRF555 belongs to the family of NPN silicon RF transistors intended for UHF applications. Originally associated with Motorola and later produced by entities like Advanced Semiconductor and Microsemi, it functions as a low-power discrete RF device. The part is distinct from higher-power variants and focuses on efficient signal driving in the ultra-high frequency spectrum.
Cross-reference with MRF555T for surface-mount variants. Verify compatibility with other UHF NPN RF transistors from manufacturers like Motorola or New Jersey Semiconductor if sourcing alternatives.