MRF5812

Overview

The MRF5812 is an RF small signal bipolar transistor manufactured by Microsemi Corporation. It is a silicon NPN device designed for ultra-high frequency band applications. The component features a maximum collector current of 0.2 A and a collector-emitter voltage rating of 15 V. It utilizes an 8-SOIC surface mount package with a rectangular plastic/epoxy body. The transistor operates at a maximum temperature of 150 °C and includes two separate elements within the single package.

Feature Summary

• Designed for ultra-high frequency RF signal amplification
• Utilizes an 8-lead surface mount SOIC package for compact integration
• Constructed from silicon NPN material for high-frequency performance

Applications

• Ultra-high frequency band signal processing
• RF small signal amplification circuits
• High-frequency communication systems

Procurement Notes

Verify the manufacturer designation carefully, as the MRF5812 part number has been associated with multiple vendors including Motorola/NXP and Qorvo. Confirm the specific datasheet matches the required electrical characteristics and package dimensions. Ensure the source document explicitly identifies Microsemi Corporation as the producer to avoid confusion with legacy or cross-manufactured equivalents.

Selection Notes

Select this component when a small-signal NPN transistor is required for ultra-high frequency operations. Verify that the 15 V collector-emitter voltage and 0.2 A collector current ratings align with the circuit design requirements. Consider the 8-SOIC package constraints for PCB layout and thermal management during the selection process.

Part Context

The MRF5812 belongs to the family of RF small signal bipolar transistors intended for high-frequency applications. It serves as a discrete semiconductor component for amplifying radio frequency signals in electronic systems requiring ultra-high frequency band operation.