ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 15V 5GHZ 8-SOIC
- Series：-
- Mfr：Microsemi Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：5GHz
- Noise Figure (dB Typ @ f)：2dB ~ 3dB @ 500MHz
- Gain：13dB ~ 15.5dB
- Power - Max：1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 50mA, 5V
- Current - Collector (Ic) (Max)：200mA
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
Download product information
Overview
The MRF5812GR2 is an NPN silicon RF transistor designed for high current, low power, and low noise amplifiers up to 1.0 GHz. It features a collector-emitter breakdown voltage of 15 Vdc and a maximum collector current of 200 mA. At 500 MHz with IC = 50 mAdc and VCE = 10 Vdc, it provides a typical minimum noise figure of 2.0 dB, associated gain of 15.5 dB, and maximum stable gain of 20 dB. The device utilizes a cost-effective SO-8 package.
Feature Summary
- Optimized for low noise performance in high-frequency applications
- Designed for high current operation within low power constraints
- Utilizes a compact SO-8 surface mount package
Applications
- Low noise amplifiers (LNA)
- General purpose RF amplification
- High frequency signal processing circuits
Procurement Notes
Verify the RoHS compliant status by confirming the 'G' suffix on the part number. Ensure the 'R2' suffix matches the required tape and reel quantity of 2500 units. Cross-reference the manufacturer Advanced Power Technology with the specific datasheet revision A from September 2005 to confirm electrical parameters match your design requirements.
Selection Notes
Select this component when designing amplifiers requiring low noise figures around 2.0 dB at 500 MHz. Consider the 15 Vdc collector-emitter voltage limit and 200 mA maximum current rating during biasing. The SO-8 package is suitable for space-constrained designs requiring thermal dissipation capabilities up to 1.25 Watts at 25°C case temperature.
Part Context
This component belongs to the MRF5812 series manufactured by Advanced Power Technology. The 'G' suffix indicates RoHS compliance and lead-free terminals, while 'R2' specifies the 2500-unit tape and reel packaging format. It is distinct from the non-compliant or differently packaged R1 variant.
Replacement Considerations
The MRF5812A serves as a functional alternative within the same product family. Verify that the replacement maintains compatibility with the SO-8 package dimensions and meets the required 15 Vdc breakdown voltage and 200 mA current specifications.
