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Product Detailed Parameters
- Description：TRANS NPN 15V 200MA
- Series：-
- Mfr：Microsemi Corporation
- Package：Tape & Reel (TR)
- Transistor Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：-
- Gain：-
- Power - Max：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Current - Collector (Ic) (Max)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MRF5812MR2 is an NPN silicon RF small-signal bipolar transistor designed for high-current, low-power amplifier applications up to 1.0 GHz. It features a maximum collector current of 0.2 A and a collector-emitter voltage rating of 15 V. The device operates in the ultra-high frequency band with a transition frequency of 5.0 GHz at 10 V and 75 mA. It provides a typical noise figure of 2.0 dB at 500 MHz and associated gain of 15.5 dB at the same frequency. The component is housed in an 8-lead SOIC surface-mount package.
Feature Summary
- Designed for high-current, low-power amplifiers up to 1.0 GHz
- Low noise performance with 2.0 dB noise figure at 500 MHz
- High gain characteristics with 15.5 dB associated gain at 500 MHz
- State-of-the-art technology featuring fine line geometry arsenic emitters
Applications
- High-current low power amplifiers
- Ultra high frequency band signal processing
- Low noise amplifier stages
Procurement Notes
Verify the specific suffix 'MR2' against official Microsemi or NXP documentation to confirm exact pinout and electrical tolerances, as suffixes often denote specific tape-and-reel packaging or testing criteria. Ensure the source document explicitly lists this part number variant to avoid confusion with standard MRF5812 or R1/R2 variants which may have different mechanical or ordering specifications.
Selection Notes
Select this component for designs requiring low noise and high gain in the UHF band up to 1 GHz. The 15 V collector-emitter voltage and 0.2 A collector current define the operating limits. Verify thermal management requirements for the SO-8 package under continuous wave operation conditions specified in the datasheet.
Part Context
This transistor belongs to the MRF5812 family of RF & Microwave discrete low power transistors originally developed by Motorola and later maintained by NXP and Microsemi. The family utilizes state-of-the-art technology including fine line geometry arsenic emitters, gold top metallization, and nichrome thin-film ballasting resistors to ensure reliability and performance consistency.
Replacement Considerations
Public confirmed substitutes include MRF5812R1 and MRF5812R2. Verify compatibility regarding pinout configuration and specific electrical parameter tolerances before substitution.
