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Product Detailed Parameters
- Description：RF TRANS NPN 15V 5GHZ 8-SOIC
- Series：-
- Mfr：Microsemi Corporation
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：5GHz
- Noise Figure (dB Typ @ f)：2dB ~ 3dB @ 500MHz
- Gain：13dB ~ 15.5dB
- Power - Max：1.25W
- DC Current Gain (hFE) (Min) @ Ic, Vce：50 @ 50mA, 5V
- Current - Collector (Ic) (Max)：200mA
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The MRF5812R1 is an NPN silicon RF transistor manufactured by Microsemi Corporation, designed for high-frequency applications up to 5 GHz. It operates with a maximum collector-emitter voltage of 15V and supports a maximum collector current of 200mA. The device delivers a typical power output of 1.25W and features a DC current gain (hFE) of at least 50 when tested at 50mA and 5V. Gain ranges from 13dB to 15.5dB, while the noise figure typically falls between 2dB and 3dB at 500MHz. It is housed in an 8-SOIC surface-mount package.
Feature Summary
- Designed for high-current low-power amplifier applications within the ultra-high frequency band.
- Utilizes fine line geometry arsenic emitters and gold top metallization for performance optimization.
- Incorporates nichrome thin-film ballasting resistors to ensure stability and reliability.
Applications
- High-frequency low-noise amplification circuits
- Ultra-high frequency signal processing stages
- Low intermodulation distortion amplifier designs
Procurement Notes
Verify component authenticity through authorized channels as this part is marked as obsolete. Confirm that the specific lot date code meets project requirements before integration. Ensure proper ESD handling protocols are followed during storage and assembly due to the sensitivity of the semiconductor junctions.
Selection Notes
Select this component for designs requiring stable NPN operation at frequencies up to 5GHz with moderate power handling. Consider the 8-SOIC package constraints for PCB layout. Evaluate thermal management needs given the 1.25W power rating and plastic epoxy package material limitations under continuous operation.
Part Context
This device belongs to the RF Line of NPN Silicon High-Frequency Transistors originally developed by Motorola Semiconductor, now associated with Microchip Technology following corporate acquisitions. The product family targets demanding RF environments requiring low noise and high dynamic range capabilities.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. As the MRF5812R1 is listed as obsolete, engineers must consult official manufacturer obsolescence notices or technical support for validated alternative components suitable for the same RF specifications.
