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The MRF5S19060MR1 is an N-channel enhancement-mode lateral MOSFET RF power transistor manufactured by Freescale Semiconductor. Designed for broadband commercial and industrial applications, this device operates at frequencies up to 1000 MHz. It features high gain and broadband performance, making it suitable for large-signal, common-source amplifier applications in 26-volt base station equipment. The component is characterized with series equivalent large-signal impedance parameters and includes integrated ESD protection.
Verify the manufacturer designation as Freescale Semiconductor or its successor entity when sourcing. Confirm the package type matches the required form factor for your design. Ensure the component meets RoHS compliance standards if required by your project specifications. Check for any specific handling instructions related to the ESD protection features during assembly.
Select this component for designs requiring operation up to 1000 MHz with a 26-volt supply. Consider its high gain and phase flatness for broadband requirements. Evaluate the thermal stability characteristics against your heat dissipation capabilities. Verify that the N-channel enhancement-mode technology aligns with your biasing and drive circuit constraints.
This part belongs to the MRF5S series of RF power field effect transistors. These devices are lateral MOSFETs optimized for high-performance amplifier stages. The series is known for robust construction and reliable operation in demanding RF environments, particularly in telecommunications infrastructure where linearity and power output are critical.
Public confirmed substitute part numbers are not available in the provided documentation.