MRF5S9070NR1

Overview

The MRF5S9070NR1 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 68 Vdc with a typical power gain of 17.8 dB at 880 MHz. The device delivers 14 Watts average output power in Single-Carrier N-CDMA configurations and supports 60 Watts CW output in GSM bands. It features integrated ESD protection, lead-free terminations, and a TO-270-2 plastic package.

Feature Summary

• Broadband performance suitable for frequencies up to 1000 MHz
• Integrated electrostatic discharge (ESD) protection
• Lead-free terminations compliant with RoHS standards

Applications

• Large-signal common-source amplifier applications in 26 volt base station equipment
• Single-Carrier N-CDMA signal amplification
• GSM continuous wave (CW) transmission
• GSM EDGE signal processing

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official records before implementation. Confirm that the R1 suffix corresponds to the required tape and reel quantity of 500 units per 24 mm reel. Ensure thermal management designs account for the specified junction-to-case resistance values under varying case temperatures.

Selection Notes

Select this component for high-gain, broadband RF power amplification requiring robust ruggedness. Evaluate thermal constraints carefully, as the device supports high junction temperatures up to 200°C. Verify impedance matching networks using the provided series equivalent large-signal impedance parameters for optimal performance across the target frequency band.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistor family. It utilizes Lateral N-Channel technology optimized for 26-volt base station environments. The device is housed in a TO-270-2 plastic package, designated as Case 1265-09, Style 1, providing a compact form factor for high-power density applications.

Replacement Considerations

Consult official documentation for direct substitutes within the same product family. Cross-referencing requires matching electrical characteristics, package dimensions, and thermal properties to ensure functional compatibility without redesigning the host circuitry.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 200°C.

How is the device packaged?

It is packaged in a TO-270-2 plastic package (Case 1265-09).

Does the device include ESD protection?

Yes, the MRF5S9070NR1 includes integrated ESD protection characterized by Human Body Model Class 2 and Machine Model Class A.