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Product Detailed Parameters
- Description：RF MOSFET LDMOS 26V TO272-4
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：960MHz
- Gain：18.5dB
- Voltage - Test：26 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：600 mA
- Power - Output：80W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：TO-272BB
- Supplier Device Package：TO-272 WB-4
- Configuration：-
Download product information
Overview
The MRF5S9080NBR1 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 869 MHz and 960 MHz. It supports TDMA, CDMA, and multicarrier amplifier configurations. The device delivers 80 W CW output power at 26 V with 18.5 dB gain and 60% drain efficiency in GSM mode. For GSM EDGE, it provides 36 W average power with 19 dB gain and 42% efficiency. It features internal input matching, integrated ESD protection, and qualified operation up to 32 V.
Feature Summary
- Internally matched on the input side to simplify circuit design
- Integrated electrostatic discharge (ESD) protection mechanisms
- Qualified for continuous operation at maximum drain voltages up to 32 V
Applications
- GSM base station power amplification
- GSM EDGE base station power amplification
- TDMA amplifier applications
- CDMA amplifier applications
- Multicarrier amplifier applications
Procurement Notes
Verify that the specific ordering suffix matches the required packaging format. Confirm the component status as active or obsolete through official manufacturer channels before finalizing procurement plans. Ensure compliance with RoHS directives and REACH regulations applicable to your region. Validate thermal management requirements against the specified junction-to-case resistance values.
Selection Notes
Select this component for wideband RF power applications requiring high linearity and efficiency in the 869-960 MHz range. Consider the TO-270 WB-4 plastic package for surface mount integration. Evaluate the internal input matching capability to reduce external component count. Verify system voltage constraints do not exceed the 32 V qualified limit.
Part Context
This part belongs to the MRF5S9080N series of RF power lateral MOSFETs manufactured by Freescale Semiconductor, now NXP Semiconductors. The series is engineered specifically for cellular infrastructure power amplification. The MRF5S9080NBR1 variant utilizes a reel packaging format suitable for automated assembly processes.
Replacement Considerations
Consult official manufacturer documentation for direct cross-reference data. No public substitute part numbers are confirmed in the provided datasheet.
